Ions created within the plasma impact the surface of the target to dislodge, i.e., "sputter" material from the target.
For example, to deposit materials onto a semiconductor wafer using a sputter deposition process, a plasma is produced in the vicinity of a sputter target material which is negatively biased.
The present invention relates to plasma generators, and more particularly, to a method and apparatus for generating a plasma to sputter deposit a layer of material in the fabrication of semiconductor devices.
Typical examples of such "dry processes" are plasma etching, sputter etching, and reactive ion etching.