The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.
The invention is particularly concerned with a novel and highly efficient method of removing cured Sylgard(TM) (Trademark of Dow Corning Corp.) and related elastomeric silicone adhesives from the surface of ceramics, metals, cured epoxy resins, and polyimides for reclamation and reuse of the recovered semiconductor assembly parts.
本発明は、特に、回収された半導体組立体部品の再利用および再使用のために、セラミックス,金属,硬化エポキシ樹脂,ポリイミドの表面から、硬化Sylgard(Dow Corning Corp.の登録商標)および関連するエラストメリックシリコーン接着材を除去する新規かつ極めて有効な方法に関する。
Yet another object of the present invention is to provide an efficient method of removing Sylgard residue and related silicone polymer residues from electronic components which is compatible with a variety of material surfaces including Cu, Cr, Pb/Sn, lead-free solders, polyimide passivation coatings, cured epoxies, ceramic chip carriers and silicon device chips.
This invention relates to a method of removing cured silicone polymer deposits from the surface of electronic components to provide product rework, recovery, and defect repair in microelectronics fabrication.
The present invention relates to methods of fabricating semiconductor components in which at least one step of plasma-enhanced chemical vapor deposition is performed consisting in exposing a semiconductor substrate in a vacuum to a flow of particles generated by a plasma, the particles reacting to form a passivation layer on the substrate of a material that has dielectric properties.
if it were desired to employ the principles of the invention to promote
to achieve the objects of the invention one is not limited to using AA.
it is a further object of the invention that the method can performed without
it is therefore the object of the present invention to provide an improved
the products of the process according to the invention can also be used as
to succeed legally to the ownership of the invention
The technical field generally relates to chromatographic systems and in particular to methods for matching retention times among multiple chromatographic systems.
The present invention also relates to a method for forming a pattern of a photoresist.

[0008] Accordingly, a method is provided to deposit a high-k material by first forming an interfacial layer overlying a hydrogen passivated surface.

【0008】 従って、最初に、水素パッシベート表面の上にある界面層を形成することによってhigh−k材料を堆積するための方法が提供される。
The present invention also relates to a thin film transistor using the process and preparation method thereof.
the method of this invention is applicable to any bisphenol production method
this invention relates to an improved mounting means for an
The present invention relates to communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device.
The present invention relates to a MEMS (Micro-Electro-Mechanical Systems) switch and its fabrication method.
本発明は、MEMS(Micro-Electro-Mechanical Systems)スイッチ及びその製造方法に係り、
The present invention describes a new method of removing cured elastomeric silicone adhesive, particularly, Sylgard and related silicone polymers which are commonly used in electronic module assembly.