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Up until now, the successful implementation of ALD Zr and Hf oxides have been either on an initial layer of silicon oxide, silicon oxynitride, or in the form of a reduced dielectric constant silicate film, such as ZrSiO4 or HfSiO4. これまで、ALD Z …
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This cleaning removes particles or organic contamination on the surface of the silicon wafer 5 effectively. この洗浄によりシリコンウェーハ5表面のパーティクル及び有機物を効果的に除去できる。 At this time, a region made of silicon and a region made of …
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The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating …
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The method of claim 1 wherein said cation of metal constituent is a metal or metal complex wherein said metal is selected from the group of palladium, platinum, ruthenium, silver, gold, copper, nickel, cobalt, and tin. 前記金属成分のカチオンが金属また …
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A sample of PTFE measuring 4 cm x 4 cm x 0.5 cm is immersed in the sodium anthracene (radical-anion complex) solution for 5 minutes, then rinsed with THF and Pd seeded as in Example 8. 4cm×4cm×0.5cmの寸法のPTFEの試料をナトリウムアントラセン( …
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A PTFE substrate measuring 5 cm x 5 cm x 4.19 mm (165 mils) thick and containing drilled through holes having 457.2 mu m (18 mils) diameter or an aspect ratio of 9.16-to-1 is exposed to the reducing bath for 10 minutes with constant agitation of the sub …
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Finally, the pattern is transferred to the underlayer with an oxygen reactive ion etch process. 最後に、酸素反応性イオン・エッチング・プロセスで、パターンを下層に転写する。 The film is then developed in 0.21N tetramethyl ammonium hydroxide (TMAH) for …
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